Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CWL2

High-temperature operation of 1.3-μm AlGaInAs/InP strained multiple quantum well lasers with an AlInAs electron stopper layer

Not Accessible

Your library or personal account may give you access

Abstract

Laser diodes of 1.3 μm with excellent temperature characteristics, which are usable without thermoelectric coolers, are required to realize low-cost and low-power-consumption optical transmitters for subscriber loop networks and optical interconnects.

© 1998 Optical Society of America

PDF Article
More Like This
1.3-μm AIGalnAs/InP strained multiple quantum well lasers for high-temperature operation

T. Ishikawa, T. Higashi, T. Uchida, T. Yamamoto, T. Fujii, H. Shoji, and M. Kobayashi
CWL4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

High temperature operation 1.3 μm GaInAsP/InP GRIN-SCH strained-layer quantum well lasers

T. Namegaya, A. Kasukawa, N. Iwai, and T. Kikuta
CME1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993

High-uniform and high-temperature-operation 12-element 1.5-μm AlGaInAs/InP laser arrays

Chia-Chien Lin, Tien-Tsorng Shih, Hung-Pin Shiao, Wei-Han Wang, Hung-Huei Liao, and Wei Lin
CTuM8 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.