Independently addressable multispot native-oxide confined (AlxGa1−x)0.5In0.5P quantum well lasers

D. Sun; D. W. Treat

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CWJ5

Independently addressable multispot native-oxide confined (Al_xGa_1−x)₀.₅In₀.₅P quantum well lasers

D. Sun and D. W. Treat

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Visible Lasers: II (CWJ)

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D. Sun and D. W. Treat, "Independently addressable multispot native-oxide confined (AlxGa1−x)0.5In0.5P quantum well lasers," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CWJ5.

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Abstract

Oxidation of aluminum-based III–V compounds has attracted a great deal of interest in fabricating edge-emitting and vertical-cavity surface-emitting lasers recently.¹

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