Abstract
Low-temperature-grown GaAs (LT-GaAs) is grown by molecular beam epitaxy at relatively low substrate temperatures (≈200°C).
© 1998 Optical Society of America
PDF ArticleMore Like This
S. Tautz, S. Opel, P. Kiesel, S.U. Dankowski, H. M. Hauenstein, A. Seilmeier, M. Krause, U.D. Keif, and G. H. Döhler
QMC4 European Quantum Electronics Conference (EQEC) 1998
S. U. Dankowski, P. Kiesel, S. Tautz, M. Ruff, D. Streb, U. Hilburger, H. Seichter, U.D. Keil, and G. H. Döhler
JWA5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1997
S. Tautz, S.U. Dankowski, M. Ruff, D. Streb, P. Kiesel, M. Kneissl, U.D. Keil, and G. H. Döhler
CWL2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996