2.3 - 2.6 µm CW High-Power Room Temperature Broaden Waveguide SCH-QW InGaAsSb/AlGaAsSb Diode Lasers

D. Garbuzov; H. Lee; V. Khalfin; L. DiMarco; R. Martinelli; R. Menna; J. C. Connolly

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CPD16

2.3 - 2.6 µm CW High-Power Room Temperature Broaden Waveguide SCH-QW InGaAsSb/AlGaAsSb Diode Lasers

D. Garbuzov, H. Lee, V. Khalfin, L. DiMarco, R. Martinelli, R. Menna, and J. C. Connolly

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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D. Garbuzov, H. Lee, V. Khalfin, L. DiMarco, R. Martinelli, R. Menna, and J. C. Connolly, "2.3 - 2.6 µm CW High-Power Room Temperature Broaden Waveguide SCH-QW InGaAsSb/AlGaAsSb Diode Lasers," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CPD16.

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Abstract

In this paper we describe a mid-infrared quantum well diode laser with CW room temperature operation up to 2.65 µm.

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