730-nm emitting compressively strained InGaAsP quantum well cw diode lasers

A. Al-Muhanna; J. K. Wade; L. J. Mawst; R. J. Fu; R. J. Fu

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CMD5

730-nm emitting compressively strained InGaAsP quantum well cw diode lasers

A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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High-Power Diode Lasers: I (CMD)

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A. Al-Muhanna, J. K. Wade, L. J. Mawst, and R. J. Fu, "730-nm emitting compressively strained InGaAsP quantum well cw diode lasers," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CMD5.

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Abstract

High-power diode lasers emitting at λ = 731 nm are needed for photodynamic therapy.

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