Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • (Optica Publishing Group, 1998),
  • paper CMD1

High-power 0.8-μm-band broad-area laser diodes with a decoupled confinement heterostracture

Not Accessible

Your library or personal account may give you access

Abstract

Broad-area laser diodes have required high power, high brightness, and high efficiency from applications such as solid-state laser pumping and material processing.

© 1998 Optical Society of America

PDF Article
More Like This
High-power narrow-aperture multimode AlGaAs-based lasers at 840 nm

S. O’Brien, H. Ransom, M. Hagberg, E. Zucker, and H. Zhao
CMD7 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

InGaAs Broad-Area Laser Diodes for Telecom. Application

Y. Oeda, T. Fujimoto, K. Saito, and K. Muro
OMB1 Optical Amplifiers and Their Applications (OAA) 2002

High power operation of DFB laser diodes with a decoupled confinement heterostructure

Satoru Okada, Tsuyoshi Fujimoto, Yumi Yamada, Yoshikazu Yamada, Atsushi Okubo, and Kiyofumi Muro
CMI6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved