Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

P.P. Pronko; P.A. Van Rompay; C. Horvath; X. Liu; T. Juhasz; G. Mourou

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CFD4

Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses

P.P. Pronko, P.A. Van Rompay, C. Horvath, X. Liu, T. Juhasz, and G. Mourou

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Femtosecond Microstructuring (CFD)

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P. P. Pronko, P. A. Van Rompay, C. Horvath, X. Liu, T. Juhasz, and G. Mourou, "Avalanche ionization and dielectric breakdown in silicon with ultrafast laser pulses," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CFD4.

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Abstract

Data are presented that demonstrate electron production by avalanche ionization as the dominant mechanism for laser breakdown, and subsequent surface damage in silicon, for laser pulse durations in the range of 80 fs to 9 ns.

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