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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CTuQ6

Carrier lifetimes and gain in 1.3-μm strained InAsP/InGaAsP multiple-quantum-well lasers

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Abstract

We report on measurements of differential carrier lifetime and gain as a function of carrier density, as well as total carrier lifetime at threshold in InAsP separate confinement multiple quantum well buried heterostructure (SCH-MQW-BH) lasers.

© 1997 Optical Society of America

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