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Conferences > CLEO > 1997 > CThF > CThF1
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CThF1

High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer

R. Hiroyama, T. Nishida, T. Uetani, Y. Bessho, M. Shono, M. Sawada, and A. Ibaraki

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Abstract

A high-power 630-nm-band AIGalnP laser diode with a stable transverse mode is an attractive light source for high-density rewritable optical disc systems, high-speed laser beam printers, and so on.

© 1997 Optical Society of America

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