Abstract

Major developments in wide-gap III-V nitride semiconductors recently have led to the commercial production of high-brightness blue/ green light-emitting diodes (LEDs)1 and to the demonstration of room-temperature (RT) violet laser light emission in InGaN multi-quantum-well-(MQW)-structure/GaN/AlGaN-based heterostructures under pulsed currents.

© 1997 Optical Society of America

PDF Article
More Like This
Strong near-ultraviolet and blue emissions at room temperature from In-rich InGaN/GaN multi-quantum well structures

Soon-Yong Kwon, Sung-Il Baik, Hee Jin Kim, Dong-Su Ko, Young-Woon Kim, Euijoon Yoon, Yoon-Soo Park, Jung-Won Yoon, and Heonsik M. Cheong
CWL5 Conference on Lasers and Electro-Optics (CLEO) 2005

III-V nitride-based blue laser diodes with quantum-well structures

Shuji Nakamura
CML1 Conference on Lasers and Electro-Optics (CLEO) 1996

III-V Nitride Light-Emitting Diodes

Shuji Nakamura
AP6 Advanced Solid State Lasers (ASSL) 1995

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription