Major developments in wide-gap III-V nitride semiconductors recently have led to the commercial production of high-brightness blue/ green light-emitting diodes (LEDs)1 and to the demonstration of room-temperature (RT) violet laser light emission in InGaN multi-quantum-well-(MQW)-structure/GaN/AlGaN-based heterostructures under pulsed currents.

© 1997 Optical Society of America

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