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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CPD17

Epitaxially stacked lasers with Esak.pdunctions: a bipolar cascade laser

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Abstract

We present a two color (956 and 985 nm) InGaAs/AlGaAs laser structure epitaxially stacked through a low resistance (10−5 to 10−4 Ω. cm−2) Esaki junction, exhibiting two threshold characteristics. It is shown that this structure can be considered as a bipolar cascade laser.

© 1997 Optical Society of America

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