Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1997),
  • paper CMK8

Moving space-charge field effects in GaAs metal-semiconductor field-effect transistors

Not Accessible

Your library or personal account may give you access

Abstract

Moving spate-charge field effects result from the motion of optical interference patterns formed by two interfering optical fields with unequal frequencies.

© 1997 Optical Society of America

PDF Article
More Like This
High-resolution optical spectrum analyzer based on moving space charge field effects in photoconductive semiconductors

Chen-Chia Wang and Frederic Davidson
CTuF2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

Optical spectrum analyzer based on the effects of moving space-charge fields in photoconductive semiconductors

Chen-Chia Wang, Frederic Davidson, and Sudhir Trivedi
CThL5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Monolithic integration of an AlGaAs/GaAs laser and a GaAs metal-semiconductor field effect transistor grown on Si substrates

Takashi Egawa, Takashi Jimbo, and Masayoshi Umeno
CMC2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.