Abstract
Vertical-cavity surface-emitting lasers (VCSELs) operating at 780 run usually have AlAs/GaAs superlattice active region,1 but no good performance is reported yet. We demonstrate the new type of 780 nm VCSELs having Al0.11Ga0.89As quantum wells (QWs) as the active medium. Oxide aperture is located just above the active region for efficient current confinement.
© 1996 Optical Society of America
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