Abstract

Vertical-cavity surface-emitting lasers (VCSELs) emitting around 980 nm wavelength are of much interest for short distance, Mgh-data-rate optical interconnects. Recently, VCSELs with record high conversion efficiencies of 50%¹ and record low threshold currents of 9 μA² have been reported, employing selective oxidation of AIAs for current confinement and MOCVD growth with Carbon as p-type dopant. In these small diameter devices, the maximum output power was limited to a few milliwatts. We have fabricated MBE-grown oxidized VCSELs using Beryllium as p-type dopant. Nonheat-sinked 25 μm active diameter lasers with 82% differential quantum efficiency reach maximum output powers of 47 mW and wallplug efficiencies up to 42%.

© 1996 Optical Society of America