Abstract

During the past two years significant performance advances^1-9 have been achieved in selectively oxidized vertical- cavity surface emitting lasers (VCSELs), many of which have established overall benchmark records for semiconductor lasers. For example, Fig. 1 shows a wall plug efficiency (at 1 nW output) of greater than 50%³ and threshold currents less than 10 μA have been obtained from VCSELs containing a stable and low refractive index Al-oxide formed from AlGaAs, These oxidized VCSEL structures leverage the high oxidation selectivity of Al(Ga)As and the capability of forming buried oxide layers within the epilayers of the laser.² Here we review the advances made in device fabrication, structure and performance of selectively oxidized VCSELs.

© 1996 Optical Society of America