Abstract
Recently, lasers with monolithically integrated external modulators fabricated using selective-area epitaxy in the InGaAs/ InGaAsP material system have received much attention for applications in longdistance fiber communication.1 As of yet, little work has been done on lasers with monolithically integrated modulators in the InGaAs/GaAs material system. Furthermore, the work that has been done deals with devices containing intracavity modulators, which exhibit relatively large chirp. Applications for lasers with monolithically integrated external-cavity modulators in the InGaAs/GaAs material system include wavelength-division multiplexing (WDM) local area networks and differential absorption LIDAR systems, for both of which low chirp is desired.
© 1996 Optical Society of America
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