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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CWL2

MQW wavelength-tunable DBR lasers with monolithically integrated external-cavity electroabsorption modulators with low-driving-voltages fabricated by selective-area MOCVD

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Abstract

Recently, lasers with monolithically integrated external modulators fabricated using selective-area epitaxy in the InGaAs/ InGaAsP material system have received much attention for applications in longdistance fiber communication.1 As of yet, little work has been done on lasers with monolithically integrated modulators in the InGaAs/GaAs material system. Furthermore, the work that has been done deals with devices containing intracavity modulators, which exhibit relatively large chirp. Applications for lasers with monolithically integrated external-cavity modulators in the InGaAs/GaAs material system include wavelength-division multiplexing (WDM) local area networks and differential absorption LIDAR systems, for both of which low chirp is desired.

© 1996 Optical Society of America

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