Abstract

Demonstration¹ of practical coherent- transient-based optical signal processing and optically-addressed data storage using Tm³⁺:YAG has stimulated a search for materials with better capabilities in the 790-nm region accessible by GaALAs semiconductor lasers. These devices have the potential to increase optical storage densities by 10⁴ or more and to provide GHz data rates.¹ One limit on performance is the storage density per pixel given by the ratio of the inhomogeneous to homogenous linewidths Γ_inh/Γ_h; the inhomogeneous linewidth limits the data bandwidth, while the optical coherence time or inverse Γ_h limits the length of data pulse trains. Tm³⁺:YAG has a ratio Γ_inh/Γ_h ~ 7 × 10⁶ with Γ_inh= 20 GHz.

© 1996 Optical Society of America