Abstract

A new method of post-growth intermixing of GaAs-AlGaAs multiple quantum wells (MQWs) has been developed. This new technique of impurity-free vacancy-induced disordering is area-selective, very reliabile and high reproducible. The surface of the sample is coated with a thin film of spin-on-glass (silicon oxide) and pre-baked for 30 min. at 400°C. Rapid thermal annealing (RTA) is then used to induce localized compositional disordering.

© 1996 Optical Society of America

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