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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuV4

High-speed formation of persistent gratings in doped semiconductors

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Abstract

We describe time-resolved measurements of optical grating formation in Te-doped AlGaAs. Local refractive index modulation resulting from spatially selective ionization of defect sites known as “DX” centers produces holographic diffraction gratings with efficiencies above 10% for grating periods as small as 135 nm.1,2 These gratings are persistent for a duration that ranges from microseconds to many years depending on the sample temperature—the longer times being available only at cryogenic temperatures thus far.3

© 1996 Optical Society of America

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