Abstract

With the prospect of reduced Auger rates in compressively strained heterostructures, InAsSb-based midwave infrared (3-5 µm) lasers have attracted renewed interest. Usually, these devices consist of molecular-beam epitaxy-(MBE) grown AlAsSb claddings with InAlAsSb/InAsSb or InGaAs/InAsSb strained active regions. In this paper, we present results for a midwave injection laser that is fundamentally different from current MBE devices. Our laser was grown by metalorganic chemical vapor deposition (MOCVD) and contains InPSb cladding layers. The active region consists of InAs with pseudomorphic, compressively strained InAsSb quantum wells. With this laser design, hole confinement and carrier diffusion are enhanced while ensuring high material quality in the strained active region.

© 1996 Optical Society of America