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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CTuL11

Picosecond carrier lifetime in InGaAsP grown by He plasma-assisted molecular beam epitaxy

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Abstract

Materials with large optical nonlinearities and ultrafast response times are required for compact ultrafast al optical devices.1 However there is a trade-off for nonlinear optical materials in terms of sensitivity vs. speed.2 One can make use of the large nonlinearity near a resonance in a material but the response is typically relatively slow. Ultrafast nonlinearities can be obtained far from resonance, but these nonlinearities are quite small.

© 1996 Optical Society of America

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