Abstract
Recent advances in wet thermal oxidation of AlGaAs compounds have led to dramatic improvements in the performance of InGaAs/AlGaAs vertical-cavity surface-emitting lasers (VCSELs) in the λ < 1 μm wavelength regime.1 Structures grown on InP cannot benefit from this technology because AlGaAs is mismatched to InP.
© 1996 Optical Society of America
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