Abstract
Selective oxidation of AlGaAs compounds allows formation of Al2O3 layers embedded in unoxidized semiconductor material. It is known that the oxidation rate depends very strongly on the Al concentration. By vertically tailoring Al mole fraction in such a way that upon selective oxidation from the side of the exposed mesa, oxide-semiconductor interface penetration into the semiconductor follows a desired dependence in fine vertical direction, optical elements can be formed (Fig. 1). Such elements can be incorporated into a multilayer structure such as VCSELs ASFP modulators, or RCLEDs. Specifically, we demonstrate formation of convex lenses fabricated using this method.
© 1996 Optical Society of America
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