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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThP6

Real-index-guided 630-nm-band AlGaInP laser diode with AlInP current blocking layer

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Abstract

A 630-nm-band AlGaInP laser diode with stabilized transverse mode is an attractive light source for high-density optical disc systems. Most of these laser diodes are fabricated with a buried-ridge stripe structure using a GaAs current blocking layer. In this structure, the transverse mode is stabilized not by the real-index difference between the outside and inside ridge stripe but by the optical absorption of the laser beam at the current blocking layer.

© 1996 Optical Society of America

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