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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1996),
  • paper CThP5

Modelling of leakage currents in AlGaInP/GaInP quantum-well lasers

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Abstract

There is continuing interest in the use of visible-emitting AlGaInP/GaInP quantum well lasers in optical information storage systems, optical pumping of solid-state laser media, and short-haul communication systems employing plastic fibers. In these applications ability to operate at high temperatures is important, nevertheless it is well known that there is a strong thermally activated contribution to the threshold current of these devices at room temperature and above, which in 670-nm devices is thought to be due to the leakage of electrons through the p-cladding layer.

© 1996 Optical Society of America

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