Abstract
Strained-layer multiple quantum well (MQW) structures have been used to obtain wide bandwidth modulation of semiconductor lasers due to their enhancement of differential gain over unstrained single QW structures. By utilizing modulation-doped MQW structures, a wide 3-dB modulation bandwidth of 37 GHz has been achieved in InGaAs-GaAs-AlGaAs MQW lasers.1 It has been reported that the crystal quality of a large number of QWs can be improved by using strain compensation for both In-GaAs(P)-InGaAsP and InGaAs-GaAsP QWs.2,3 Consequently, the strain-compensated MQW can be used to take full advantage of strained-layer MQW structures for high-speed modulation. In this work we report the high-speed direct modulation of strain-compensated modulation-doped MQW InGaAs-GaAsP-InGaP lasers.
© 1996 Optical Society of America
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