Abstract
In the quest to improve distributed feedback lasers for telecommunication systems, it is critical to be able to characterize these lasers effectively. The amplified spontaneous emission of a laser biased below threshold provides a wealth of information and has been used in the past to characterize Fabry-Perot lasers.1,2 In this paper, we use our model for the amplified spontaneous emission from DFB lasers coupled with our model for the material gain of strained quantum well lasers3 to analyze data measured on a 1.55-µm InGaAsP/InGaAsP strained quantum well DFB laser in an effort to systematicaEy extract important laser parameters.
© 1996 Optical Society of America
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