Abstract
The wide-band-gap GaN and AlxGa1−xN semiconductor system is the subject of much current interest for both its fundamental physical properties and for the potential applications of visible/near-UV optoelectronic devices.1 Here we report the study of nonlinear optical effects and waveguide modes of these wide-band-gap and band-gap tunable semiconductor GaN and AlxGa1−xN epitaxial films. Low-pressure metalorganic vapor deposition (MGCVD) was used to grow epitaxial GaN and AlGaN layers on (0001) sapphire substrate. The absorbance spectra of a GaN film (with thickness 2.1 μm) is shown in Fig. 1. The x-ray diffraction showed the single crystalline structure of the epitaxial films.
© 1996 Optical Society of America
PDF ArticleMore Like This
T.J. Schmidt, J.J. Song, Y.C. Chang, R. Horning, and B. Goldenberg
QFH4 International Quantum Electronics Conference (IQEC) 1998
Baozhu Wang and Xiaoliang Wang
WL39 Asia Communications and Photonics Conference and Exhibition (ACP) 2009
P. M. Lundquist, W. P. Lin, E. D. Rippert, J. B. Ketterson, and C. K. Wong
JThC2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1994