Abstract

The monolithic integration of a photodetector with silicon electronics is very attractive from standpoints of cost and yield. Operation of such circuits in the gigabit-per-second regime is desirable but has been limited by the low speed of the detectors. Metal-semiconductor-metal (MSM) diodes offer planarity and compatibility with silicon VLSI processing. Ion implantation has been shown to increase detector speed through reduction of carrier lifetimes. In this paper, we report on high-speed ion-implanted silicon MSM detectors.

© 1995 Optical Society of America