Abstract
Vertical-cavity surface-emitting lasers (VCSELs) emitting in the wavelength regime around 980 nm are of increasing interest for high-capacity, short-distance data-link systems.1 These lasers show very high coupling efficiencies into silica fibers with large alignment tolerances, and large-size independently addressable two-dimensional arrays are readily fabricated.2 Low threshold voltages and high wall-plug efficiencies of 16.5%4 and 21%3 have also been achieved. Recently we reported6 on the linewidth behavior of such planar devices with AlAs/GaAs Bragg reflectors. Here we show an improved laser structure with linewidths below 30 MHz, linewidth-power products of 2.7 MHz mW, and linewidth-enhancement factors of 2.6, which are to our knowledge the best values obtained for VCSELs operating at room temperature.
© 1995 Optical Society of America
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