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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuQ6

Broadband emission from an InGaAs-GaAs-AlGaAs LED with an integrated absorber by selective-area MOCVD

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Abstract

Superluminescent diodes (SLDs) and light-emitting diodes (LEDs) with broad spectral widths are attractive light sources for a number of applications, including fiber-optic gyroscopes and sources used in conjunction with spectroscopic elements in remote-sensing applications. Several recent studies have shown a broadening of the gain spectrum, and thus the spectral width of emission, by control of the active region.1 In this paper, we demonstrate an InGaAs-GaAs-AlGaAs single-quantum-well LED that utilizes both a continuous variation in quantum-well thickness to produce the broadband emission and a rear absorber configuration to suppress lasing.

© 1995 Optical Society of America

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