Abstract

To realize photonic integrated circuits, we need to integrate technology between different materials. The integrating technology faces many problems when the physical properties of constituent materials are different, especially in case of materials with highly mismatched lattice constants. Most photonic devices, including active and passive components, can be fabricated by using III-V compound semiconductors, and much effort has been devoted to complete heteroepitaxy and/or direct bonding between different semiconductors.^1,2 However magneto-optic devices, such as optical isolators, cannot be constructed by using III-V semiconductors. To integrate semiconductor and magnetooptic devices on the same substrate, we have been investigating the bonding, as well as the heteroepitaxy, between III-V semiconductors and magneto-optic crystals.^3,4 In this paper we report the direct bonding of InP and Gd₃Ga₅O₁₂(GGG), which is commonly used as a substrate for the magneto-optic crystal growth, and the bonding of InP and a GaInSb layer grown on the GGG substrate by MOCVD.

© 1995 Optical Society of America