Abstract

Direct-gap AlGaAs/AlGaAs quantum wells may be used to provide emission over the wavelength range ~640 to 890 nm. The use of this material in visible laser diodes has been very limited because of the high reactivity of Al, which means that it is often highly contaminated with oxygen or carbon during growth. AlGaAs would be an attractive replacement for quaternary AlGaInP materials in devices operating in the range 640 to 680 nm, or to provide emission in the range 680 to 750 nm, which is otherwise difficult to obtain.

© 1995 Optical Society of America