A new impurity-free method of area-selectively disordering GaAs/AlGaAs MQW structures has been developed.1 This process is used to realize an optical switch that has a short (500-μm) nonlinear mode-beating section coupled with low-loss branching waveguides. The waveguide core, which consists of 38 pairs of GaAs and Ga0.7Al0.3As, each 80 Å thick, is confined on either side by Ga0.7Al0.3As cladding layers that are 0.5 um thick on the top and 2.5 μm thick on the bottom. The undoped layer was grown by molecular beam epitaxy on an undoped GaAs substrate.

© 1995 Optical Society of America

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