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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuB5

33-mA-threshold InGaAs/GaAs vertical-cavity surface-emitting lasers grown by MOCVD

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Abstract

Low-threshold-current vertical-cavity surface-emitting lasers (VCSELs) grown by metal organic chemical-vapor deposition (MOCVD) are very attractive for future optical communications and optical interconnects because of their possibilities of low power consumption and mass production.1,2 Also, thermal properties, including the thermal resistance and the increment of operating-temperature range, are important factors in temperature insensitive VCSELs.3 To date, most of submilliampere-threshold VCSELs (Ith = 0.19 mA pulsed and 0.225 mA cw) have been fabricated by MBE.4,5

© 1995 Optical Society of America

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