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Conferences > CLEO > 1995 > CTuB > CTuB3
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuB3

Etched-pillar vertical-cavity surface-emitting laser diodes with submilliampere threshold currents and high output power

T. Wipiejewski, D. B. Young, M. G. Peters, B. J. Thibeault, and L. A. Coldren

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Abstract

We have fabricated etched-pillar vertical-cavity surface-emitting laser diodes (VCSELs) with submilliampere threshold currents and maximum output power levels of over 1 mW. Figure 1 shows a schematic diagram of the device. The epitaxial layers were grown by molecular-beam epitaxy. The n-doped bottom and p-doped top Bragg reflectors consist of 17.5 and 18 periods AlAs-GaAs quarter-wave stacks with graded interfaces, respectively.

© 1995 Optical Society of America

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