Abstract
Heterojunction p++ GexSi1−x/p-Si internal-photoemission infrared (HIP) detectors offer the possibility of extending the wavelength response of Si-based Schottky-barrier focal-plane arrays (EPAs). A 400×400-element FPA with a cutoff wavelength of 9.3 µm that incorporates GeSi HIP detectors using films grown by molecular-beam epitaxy has been demonstrated.1 In this investigation, we fabricated individual HIP detectors by using two different device structures grown by ultrahigh-vacuum chemical-vaper deposition (UHVCVD). One of these structures utilizes the selective epitaxial growth of heavily doped p-type GeSi films within oxide windows patterned on (100) p-Si substrates.
© 1995 Optical Society of America
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