Abstract
Gratings with 0.25-0.5-μm periods formed in semiconductors are required for many optoelectronic devices, including DFB and DBR lasers in particular. These fine structures have been fabricated by using e-beam lithography or holographic techniques. The high cost of e-beam lithography and the lack of flexibility for holographic techniques make these two processes less than ideal for low-cost, high-volume device production. In this paper we investigate a new technology, namely, cascaded self-induced holography, for making submicrometer gratings.
© 1995 Optical Society of America
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