Abstract
The use of a broad-band A2 B6 semiconductors and their ternary and quaternary alloys for vertical-cavity surface-emitting lasers (VCSEL’s) fabrication open a new possibilities for their design and applications. In particular, one of the promising using is the realization of large screen color high definition TV (HDTV) electron beam-pumped laser projection systems, and flat panel color displays [1,2]. The bulk A2 B6 compounds were used recently for the first demonstration of the laser cathode ray tobe (LCRT) and color laser TV system [3]. However, the main limitation of LCRT was the low temperature lasers operation. Essential decreasing of the threshold current may be achieved only by using of multi quantum wells (MQW’s) or superlattice structures (SLS).
© 1995 Optical Society of America
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