Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CMH4

Gain–current characteristics of GaN–AlGaN quantum wells

Not Accessible

Your library or personal account may give you access

Abstract

The ever-improving quality of GaN, AlGaN, and InGaN epitaxial films leads to the prospect of high-performance blue-emitting quantum-well lasers in these material systems in the very near future. We have calculated the gain and spontaneous recombination current for GaN-AlGaN-quantum-well lasers and have estimated the likely threshold current of such devices.

© 1995 Optical Society of America

PDF Article
More Like This
Spontaneous polarization effects on the optical properties of AlGaN/InGaN/GaN quantum wells

L. -H. Peng, K. -T. Hsu, C. -W. Shih, C. -C. Chuo, and J. -I. Chyi
WC1_3 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2001

High TE-Polarized Optical Gain from AlGaN-Delta-GaN Quantum Well for Deep UV Lasers

Jing Zhang, Hongping Zhao, and Nelson Tansu
JTuD4 CLEO: Applications and Technology (CLEO:A&T) 2011

Gain characteristics of InGaN/GaN quantum well diode lasers

Y.-K. Song, M. Kuball, A.V. Nurmikko, G. E. Bulman, K. Doverspike, S.T. Sheppard, T.W. Weeks, M. Leonard, H. S. Kong, H. Dieringer, and J. Edmond
CWD3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1998

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.