Abstract

External modulation of 1.55 μm DFB lasers for high bit rate fiber optic telecommunication applications is very attractive for its reduced wavelength chirping as compared with direct modulation of the laser diodes. Monolithic integration of MQW DFB lasers and electroabsorptive modulators based on the quantum confined Stark effect (QCSE) has readily been achieved through multiepitaxy growth of distinct active layers for the two devices.¹ The integration process should however preserve material quality and remain simple for good yield and reproducibility. Selective disordering of a single active layer is then an interesting route to integrate photonic functions. This method has mostly been demonstrated in the GaAs system for 0.8 pm wavelength applications,^2,3 and has only recently been applied to the InP system for fabrication of integrated external cavity InGaAs/InP lasers.⁴

© 1994 Optical Society of America