Abstract

Dynamic behaviour of semiconductor lasers can be strongly influenced by carrier heating.^1–9 Usually stimulated emission and free-carrier absorption are considered as main sources of heating.¹·⁴·⁵ However recent investigations⁶·⁷ have shown that very important source of heating is carrier injection process, and under sufficiently large band-gap offset the modulation bandwidth can increase considerably.⁶ Moreover the inclusion of hot phonons can lead to additional effects in intensity modulation response of quantum well (QW) lasers.⁷ In this report we present the results of theoretical investigation on influence of carrier heating on frequency chirping in QW lasers, including hot-phonon effect. Simple analytical expressions for the chirp to modulated power ratio (CPR) are derived.

© 1994 Optical Society of America