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Conferences > CLEO > 1994 > CTuN > CTuN6
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper CTuN6

Self-electro-optic effect device using Wannier-Stark localization in an unstrained InGaAs/InAlAs superlattice grown on GaAs substrate

K. Tominaga, M. Hosoda, and T. Watanabe

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Abstract

Self-electro-optic effect devices (SEEDs) using the Wannier-Stark localization (WSL) effect1 have a high-contrast on/off ratio for modulator applications. Previously, SEEDs based on the WSL effect have been reported for GaAs/AlGaAs(AlAs) superlattices (SLs) on GaAs substrate2,3 and for In0.53Ga0.47As/In0.52Al0.48As SLs on InP substrate.4 In these systems, however, the operating wavelength was restricted because the lattice constant in SLs must be equal to that of the substrate.

© 1994 Optical Society of America

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