InGaAsP/GaAs high-power lasers for Nd:YAG pumping

M. Razeghi; J. Diaz; I. Eliashevich; X. He; E. Kolev; L. Wang; D. Garbuzov

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1994),
paper CMH5

InGaAsP/GaAs high-power lasers for Nd:YAG pumping

M. Razeghi, J. Diaz, I. Eliashevich, X. He, E. Kolev, L. Wang, and D. Garbuzov

Conference on Lasers and Electro-Optics 1994

Anaheim, California United States
8–13 May 1994
ISBN: 1-55752-341-X

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High-Power Diode Lasers (CMH)

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M. Razeghi, J. Diaz, I. Eliashevich, X. He, E. Kolev, L. Wang, and D. Garbuzov, "InGaAsP/GaAs high-power lasers for Nd:YAG pumping," in Conference on Lasers and Electro-Optics, T. Baer, A. Smirl, J. Bowers, and D. Miller, eds., Vol. 8 of OSA Technical Digest (Optica Publishing Group, 1994), paper CMH5.

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Abstract

Recent results^1,2 show that aluminum-free 0.808 pm InGaAsP/GaAs laser diodes are expected to have higher power and longer device lifetime than AlGaAs-based lasers. This work presents new results obtained for Al-free double heterostructure (DH) and separate confinement heterostructure (SCH) InGaP-InGaAsP-GaAs lasers grown by LP-MOCVD.² Broad-area laser diodes with stripe width 100 μm and cavity length varying from 100 μm to 1400 μm were fabricated by standard photolithographic technique. Series resistance as low as 0.1 Ω has been obtained for laser diodes with cavity length of 1 mm, measured for bonded diodes in cw operation.

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