Abstract
Photodetectors for the mid-infrared range (6–14 μm), based on III—V semiconductors, present several advantages compared to other materials used for infrared detection, such as II–VI semiconductors.1–3 The crystal growth and processing technologies of III–V materials are in a highly developed stage.4 Therefore, it is possible to accurately control some important parameters for this type of device, such as the band gap, the separation between the levels in the well, the operating temperature, and the speed. The good uniformity and reproducibility of III–V infrared detector manufacturing also allows monolithic integration of these devices.4
© 1994 Optical Society of America
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