Abstract
We have recently demonstrated picosecond time-resolved pump-probe electroabsorption measurements on a p-i-n diode containing strained InGaAs/GaAs multiple-quantum well (MQW) in the i-region.1 Using Livescu's enhanced diffusion model,2 we characterized the rise and decay times of electroabsorption in the diode as a function of bias voltage. We found that the rise and decay times are 10 ps above 4 V bias. An increase of decay time below 4 V bias was observed and not fully understood. In order to understand the mechanisms affecting the decay times, two more samples were examined. We find that the decay times were strongly affected by the sheet resistance of the electrodes and the type of dominant impurities in the i-region.
© 1993 Optical Society of America
PDF ArticleMore Like This
H. S. Wang, P. Li Kam Wa, M. Ghisoni, G. Parry, P. N. Stavrinou, C. Roberts, and A. Miller
CThI41 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995
Daniel Mahgerefteh, Ching-Mei Yang, Li Chen, Kezhong Hu, E. Garmire, and A. Madhukar
MSS2 OSA Annual Meeting (FIO) 1992
K. W. Goossen, J.E. Cunningham, M.B. Santos, and W. Y. Jan
PD.4 Quantum Optoelectronics (QOE) 1993