Abstract
We report the responses of Al0.43In0.52As/Ga0.47In0.53 single-heterojunction bipolar transistors (HBTs) with 100-nm thick bases to subpicosecond 620-nm optical pulses. Emitter photocurrent transients as brief as 2.4 ps, corresponding to a photodetection bandwidth of 200 GHz, have been observed; external quantum efficiencies were as high as 0.078. The obvious compatibility of the devices with integrated circuitry and their relative fabrication simplicity might make HBT-based photodetectors competitive with p-i-n or MSM photodetectors. An equivalent-circuit model satisfactorily accounts for the transients and provides insight into the dynamics of photo-generated carriers in the devices.
© 1993 Optical Society of America
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