Abstract

Quantum wire semiconductor lasers offer a number of advantages over quantum well lasers, including lower threshold current densities, increased modulation band widths, narrower spectral linewidths, and reduced temperature sensitivities. Several methods have been utilised to produce wire-like structures.¹ However, the realization of the benefits described above have so far been limited by the defects caused by the fabrication techniques used and minimum obtainable wire dimensions.

© 1993 Optical Society of America