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Conferences > CLEO > 1993 > CWB > CWB2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CWB2

Surface-emitting diodes with lateral p-n subband junctions in Si-doped quantum wells on (111)A-patterned substrates

T. Yamamoto, M. Inai, T. Takebe, and T. Watanaba

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Abstract

Conduction type in Si-doped GaAs and A1GaAs layers grown on (N11)A GaAs (N<3) can be controlled using molecular-beam epitaxy (MBE) growth conditions and surface orientations.1 Therefore, lateral p-n junctions of Si-doped GaAs can be formed at the intersection between the (111)A plane and the high-index plane on the patterned substrates.

© 1993 Optical Society of America

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