Abstract
Wideband-gap II-VI compound semiconductors are useful materials for optoelectronic devices in the visible region, such as blue light-emitting diodes and short-wavelength semiconductor lasers.1,2 This paper reports the growth of ZnSe-ZnS and ZnSe-ZnTe strained-layer superiattices (SLSs) by molecularbeam epitaxy (MBE). X-ray diffraction, transmission electron microscopy (TEM) observation, photoluminescence (PL) spectra, transient PL spectra, absorption spectra, and Ratnan scattering measurements were performed to characterise the structural and optical properties of these materials.
© 1993 Optical Society of America
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